unisonic technologies co., ltd std888 preliminary pnp epitaxial silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2013 unisonic technologies co., ltd qw-r209-028.a high current, high performance, low voltage pnp transistor ? description the utc std888 is a high current, high performance, low voltage pnp transistor; it uses utc?s advanced technology to provide customers high dc current gain and very low saturation voltage. the utc std888 is suitable for switching regulator in battery charger applications, heavy load driv er and voltage regulation in bias supply circuits, etc. ? features * very low collector to emitter saturation voltage * high dc current gain ? equivalent circuit b e c ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 std888l-tn3-t STD888G-TN3-T to-252 b c e tube std888l-tn3-r std888g-tn3-r to-252 b c e tape reel std888l-tn3-t (1)packing type (2)package type (1) t: tube, r: tape reel (2) tn3: to-252 (3) l: lead free, g: halogen free (3)halogen free
std888 preliminary pnp epitaxial silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r209-028.a ? absolute maximum ratings parameter symbol ratings unit collector-base voltage (i e =0) v cbo -60 v collector-emitter voltage (i b =0) v ceo -30 v emitter-base voltage (i c =0) v ebo -6 v collector current i c -5 a collector peak current (t p <5ms) i cm -10 a total dissipation at t c =25c p d 15 w junction temperature t j 150 c storage temperature t stg -65~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t case =25c unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i e =0, i c =-100a -60 v collector-emitter breakdown voltage bv ceo (note 1) i b =0, i c =-10ma -30 v emitter-base breakdown voltage bv ebo i c =0, i e =-100a -6 v collector cut-off current i cbo v cb =-30v, i e =0 -10 na emitter cut-off current i ebo i c =0, v eb =-6v -10 na collector-emitter sa turation voltage v ce(sat) (note 1) i c =-500ma, i b =-5ma -0.15 v i c =-2a, i b =-50ma -0.25 v i c =-5a, i b =-250ma -0.70 v i c =-6a, i b =-250ma -0.70 v i c =-8a, i b =-400ma -1 v i c =-10a, i b =-500ma -1.5 v base-emitter satu ration voltage v be(sat) (note 1) i c =-2a, i b =-50ma -1.1 v i c =-6a, i b =-250ma -1.4 v dc current gain h fe (note 1) i c =-10ma, v ce =-1v 150 200 i c =-500ma, v ce =-1v 150 200 300 i c =-5a, v ce =-1v 75 100 i c =-8a, v ce =-1v 40 55 i c =-10a, v ce =-1v 15 35 delay time t d i c =-3a, i b1 =-i b2 =-60ma v cc =-20v 180 220 ns rise time t r 160 210 ns storage time t s 250 300 ns fall time t f 80 100 ns note: 1. pulsed: pulse duration=300s, duty cycle 1.5%
std888 preliminary pnp epitaxial silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r209-028.a ? resistive load switching test circuit utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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